Электронные и оптические свойства наноструктур, созданных на основе германия и кремния методами осаждения и ионной имплантации



жүктеу/скачать 0.93 Mb.
бет4/5
Дата23.05.2022
өлшемі0.93 Mb.
#458565
1   2   3   4   5
илмий диссертация-- (2)

Литература - [I]

  1. I[I]. O. P. Pchelyakov*, Yu. B. Bolkhovityanov*, A. V. Dvurechenski Ï*, L. V. Sokolov*,A. I. Nikiforov*, A. I. Yakimov*, and B. Voigtländer Silicon–Germanium Nanostructures with Quantum Dots: Formation Mechanisms and Electrical Properties, Semiconductors, Vol. 34, No. 11, 2000, pp. 1229–1247

  2. 35. T. I. Kamins, E. C. Carr, R. S. Williams, and S. J. Rosner, J. Appl. Phys. 81, 211 (1997).

  3. 36. G. Medeiros-Ribeiro, A. M. Bratkovski, T. I. Kamins, et al., Science 279, 353 (1998)

  4. 41. F. M. Ross, J. Tersoff, and R. M. Tromp, Phys. Rev. Lett. 80, 984 (1998); Microsc. Microanal. 4, 254 (1998)

  5. 38. T. I. Kamins, G. Medeiros-Ribeiro, D. A. A. Ohlberg, and R. S. Williams, Appl. Phys. A: Solids Surf. 67, 727 (1998)

  6. 40. T. I. Kamins, G. A. D. Briggs, and R. Stanley Williams, Appl. Phys. Lett. 73, 1862 (1998)

  7. 42. N. V. Vostokov, S. A. Gusev, I. V. Dolgov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 8 (2000) [Semiconductors 34, 6 (2000)]

  8. 39. R. S. Williams, G. Medeiros-Ribeiro, T. I. Kamins, and D. A. A. Ohlberg, J. Phys. Chem. B 102, 9605 (1998)

  9. 43. C.-H. Chiu, Appl. Phys. Lett. 75, 3473 (1999).

  10. 44. V. A. Shchukin and D. Bimberg, Appl. Phys. A: Solids Surf. 67, 687 (1998); Rev. Mod. Phys. 71, 1125 (1999).

  11. 45. P. Müller and R. Kern, J. Cryst. Growth 193, 257 (1998).

  12. 46. J. A. Floro, V. B. Sinclair, E. Chason, et al., Phys. Rev. Lett. 84, 701 (2000).

  13. 29. T. I. Kamins, G. Medeiros-Ribeiro, D. A. A. Ohlberg, and R. Stanley Williams, J. Appl. Phys. 85, 1159 (1999)

  14. 34. M. Kästner and B. Voigtländer, Phys. Rev. Lett. 82, 2745 (1999).

  15. 53. Z. Jiang, H. Zhu, F. Lu, et al., Thin Solid Films 321, 60 (1998).


Литература - [II]

  1. [II] Kosarev A. et al. Silicon-Germanium Films Deposited by Low Frequency PE CVD: Effect of H2 and Ar Dilution //Journal of the Materials Research Society. – 2005. – Т. 21. – №. UCRL-JRNL-215632.

  2. 1. J.K. Rath, F.D. Tichelaar, and R.E.I. Schropp: Heterogeneous growth of microcrystalline silicon germanium. Sol. Energy Mater. Sol. Cells 74, 533 (2002).

  3. 2. M. Isomura, K. Nakahata, M. Shima, S. Taira, K. Wakisaka, M. Tanaka, and S. Kiyama: Microcrystalline silicon–germanium solar cells for multi-junction structures. Sol. Energy Mater.Sol. Cells 74, 519 (2002).

  4. 3. M. Krause, H. Stiebig, R. Carius, and H. Wagner: Microcrystalline germanium photodetectors, in Amorphous and Heterogeneous Silicon-Based Films—2001, edited by M. Stutzman, J.B. Boyce, J.D. Cohen, R.W. Collins, and J. Hanna (Mater. Res. Soc. Symp. Proc. 664, Warrendale, PA, 2001), p. A26.5.

  5. 4. G. Masini, V. Cencelli, L. Colace, F. DeNotaristefani, and G. Assanto: A germanium photodetector array for the near infrared monolithically integrated with silicon CMOS readout electronics. Physica E 16, 614 (2003).

  6. 5. R. Ambrosio, A. Torres, A. Kosarev, A. Heredia, and M. Garcia: Amorphous Si1−yGey:H,F films obtained by low frequency PECVD for uncooled microbolometers, in Amorphous and Nanocrystalline Silicon Science and Technology—2004, edited by G. Ganguly, M. Kondo, E.A. Schiff, R. Carius, and R. Biswas. (Mater. Res. Soc. Symp. Proc. 808, Warrendale, PA, 2004), p. A4.29.

  7. 6. A. Torres, A. Kosarev, M.L. Garcia, and R. Ambrosio: Uncooled micro-bolometer based on amorphous germanium film. J. Non- Cryst. Solids 329, 179 (2003).

  8. 7. M. Garcia, R. Ambrosio, A. Torres, and A. Kosarev: IR bolometers based on amorphous silicon germanium alloys. J. Non-Cryst. Solids 338–340, 744 (2004).

  9. 8. W.B. Jordan and S. Wagner: Nanocrystalline germanium p-i-n structures, in Amorphous and Nanocrystalline Silicon Science and Technology—2004, edited by G. Ganguly, M. Kondo, E.A. Schiff, R. Carius, and R. Biswas (Mater. Res. Soc. Symp. Proc. 808,Warrendale, PA, 2004), p. A9.47

  10. 11. Y. Liu and V.L. Dalal: Properties of amorphous silicon- germanium films and devices deposited at higher growth rates, in Amorphous and Heterogeneous Silicon-Based Films—2002, edited by J.D. Cohen, J.R. Abelson, H. Matsumura, and J. Robertson (Mater. Res. Soc. Symp. Proc. 715, Warrendale, PA, 2002), p. A18.3.

  11. 12. H. Matsumura, M. Yamaguchi, and K. Morigaki: Properties of catalytic VD amorphous silicon germanium (a-SiGe:H), in Amorphous Silicon Technology—1990, edited by P.C. Taylor, M.J. Thompson, P.G. LeComber, Y. Hamakawa, and A. Madan (Mater. Res. Soc. Symp. Proc. 192, Pittsburgh, PA, 1990), p. 499.

  12. 13. V.L. Dalal, Y. Liu, Z. Zhou, and K. Han: Growth and properties of low bandgap amorphous (Si, Ge) alloy materials and devices. J. Non-Cryst. Solids 299–302, 1127 (2002).

  13. 41. W. Paul, D.K. Paul, B. Von Roedern, J. Blake, and S. Oguz: Preferential attachment of H in amorphous hydrogenated binary semiconductors and consequent inferior reduction of pseudogap state density. Phys. Rev. Lett. 46, 1016 (1981).

  14. 42. M. Stutzmann, R.A. Street, C.C. Tsai, J.B. Boyce, and S.E. Ready: Structural, optical, and spin properties of hydrogenated amorphous silicon-germanium alloys. J. Appl. Phys. 66, 569 (1989).

  15. 43. V.L. Dalal: Growth chemistry of amorphous silicon and amorphous silicon-germanium alloys. Curr. Opin. Solid State Mater. Sci. 6, 455 (2002).



жүктеу/скачать 0.93 Mb.

Достарыңызбен бөлісу:
1   2   3   4   5



©dereksiz.org 2024
әкімшілігінің қараңыз
    Басты бет