Электронные и оптические свойства наноструктур, созданных на основе германия и кремния методами осаждения и ионной имплантации
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[III]. Chen T. et al. Interfacial structure of SrZr x Ti1− x O3 films on Ge //Applied Physics Letters. – 2018. – Т. 113. – №. 20. – С. 201601. Литература - [IV] [IV] Ray S. K. et al. Structural and optical properties of germanium nanostructures on Si (100) and embedded in high-k oxides //Nanoscale Research Letters. – 2011. – Т. 6. – №. 1. – С. 1-10. 2).1. Park CJ, Cho KH, Yang W-C, Cho HY, Choi S-H, Elliman RG, Han JH, Kim C:Large capacitance-voltage hysteresis loops in SiO2 films containing Ge nanocrystals produced by ion implantation and annealing. Appl Phys Lett 2006, 88:071916. 3) 2. Das S, Das K, Singha RK, Dhar A, Ray SK: Improved charge injection characteristics of Ge nanocrystals embedded in hafnium oxide for floating gate devices. Appl Phys Lett 2007, 91:233118. 4) 3. Das K, NandaGoswami M, Mahapatra R, Kar GS, Dhar A, Acharya HN, Maikap S, Lee J-H, Ray SK: Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures. Appl Phys Lett 2004, 84:1386. 5) 4. Zhang J-Y, Ye Y-H, Tan X-L, Bao X-M: Voltage-controlled electroluminescence from SiO2 films containing Ge nanocrystals and its mechanism. Appl Phys A 2000, 71:299. 6) 5. Liao MH, Yu C-Y, Lin T-H, Liu CW: Electroluminescence from the Ge quantum dot MOS tunneling diodes. IEEE Electron Device Lett 2006, 27:252. 7) 6. Takeoka S, Fujii M, Hayashi S, Yamamoto K: Size-dependent near-infrared photoluminescence from Ge nanocrystals embedded in SiO2 matrices. Phys Rev B 1998, 58:7921 8) 7. Thewalt MLW, Harrison DA, Reinhart CF, Wolk JA: Type II Band Alignment in Si1-xGex/Si(001) Quantum Wells: The Ubiquitous Type I Luminescence Results from Band Bending. Phys Rev Lett 1997, 79:269. 9) 8 . Schmidt OG, Eberl K, Rau Y: Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands. Phys Rev B 2000, 62:16715. 10) 9. Kamenev BV, Tsybeskov L, Baribeau J-M, Lockwood DJ: Coexistence of fast and slow luminescence in three-dimensional Si/Si1-xGex nanostructures. Phys Rev B 2005, 72:193306-1. 11) 10. Walters RJ, Bourianoff GI, Atwater HA: Field-effect electroluminescence in silicon nanocrystals. Nat Mater 2005, 4:143. 12) 11. Ross FM, Tromp RM, Reuter MC: Transition States Between Pyramids and Domes During Ge/Si Island Growth. Science 1999, 286:1931. 13) 12. Montalenti F, Raiteri P, Migas DB, Von Kanel H, Rastelli A, Manzano C, Costantini G, Denker U, Schmidt OG, Ken K, Miglio L: Atomic-Scale Pathway of the Pyramid-to-Dome Transition during Ge Growth on Si (001). Phys Rev Lett 2004, 93:216102-1. 14) 13. Singha RK, Das S, Majumder S, Das K, Dhar A, Ray SK: Evolution of strain and composition of Ge islands on Si (001) grown by molecular beam epitaxy during postgrowth annealing. J Appl Phys 2008, 103:114301 Литература - [V] [V] Vadavalli S. et al. Optical properties of germanium nanoparticles synthesized by pulsed laser ablation in acetone //Frontiers in Physics. – 2014. – Т. 2. – С. 57. жүктеу/скачать 0.93 Mb. Достарыңызбен бөлісу:
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